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Dispersion Relations in Hea...
This book presents the dispersion relation in heavily doped nano-structures. The materials considered are III-V, II-VI, IV-VI, GaP, Ge, Platinum Antimonide, stressed, GaSb, Te, II-V, HgTe/CdTe superlattices and Bismuth Telluride semiconductors. The dispersion relation is discussed under magnetic quantization and on the basis of carrier energy spectra. The influences of magnetic field, magneto inversion, and magneto nipi structures on nano-structures is analyzed. The band structure of optoelectronic materials changes with photo-excitation in a fundamental way according to newly formulated electron dispersion laws. They control the quantum effect in optoelectronic devices in the presence of light. The measurement of band gaps in optoelectronic materials in the presence of external photo-excitation is displayed. The influences of magnetic quantization, crossed electric and quantizing fields, intense electric fields on the on the dispersion relation in heavily doped semiconductors and super-lattices are also discussed. This book contains 200 open research problems which form the integral part of the text and are useful for graduate students and researchers. The book is written for post graduate students, researchers and engineers
Monografía
monografia Rebiun17524828 https://catalogo.rebiun.org/rebiun/record/Rebiun17524828 cr c||||||||| 151026s2016 gw o 001 0 eng d 9783319210001 978-3-319-21000-1 10.1007/978-3-319-21000-1 doi UPVA 996890881103706 UAM 991007712944504211 UR0394460 UAL. spa. UAL. rdc TJFD5 bicssc TEC008090 bisacsh 537.622 23 Ghatak, Kamakhya Prasad. author Dispersion Relations in Heavily-Doped Nanostructures by Kamakhya Prasad Ghatak 1st ed. 2016 Cham Springer International Publishing Imprint: Springer 2016 Cham Cham Springer International Publishing Imprint: Springer 1 recurso en línea 1 recurso en línea LV, 625 p. 31 illus LV, 625 p. 31 illus Springer Tracts in Modern Physics 0081-3869 265 Springer eBooks From the Contents: The DR in Quantum Wells (QWs) of Heavily Doped(HD) Non-Parabolic Semiconductors -- The DR in Nano-Wires (NWs) of Heavily Doped (HD) Non-Parabolic Semiconductors -- The DR in Quantum Box (QB) of Heavily Doped (HD) Non-Parabolic Semiconductors -- The DR in doping superlattices of HD Non-Parabolic Semiconductors -- The DR in Accumulation and Inversion Layers of Non-Parabolic Semiconductors This book presents the dispersion relation in heavily doped nano-structures. The materials considered are III-V, II-VI, IV-VI, GaP, Ge, Platinum Antimonide, stressed, GaSb, Te, II-V, HgTe/CdTe superlattices and Bismuth Telluride semiconductors. The dispersion relation is discussed under magnetic quantization and on the basis of carrier energy spectra. The influences of magnetic field, magneto inversion, and magneto nipi structures on nano-structures is analyzed. The band structure of optoelectronic materials changes with photo-excitation in a fundamental way according to newly formulated electron dispersion laws. They control the quantum effect in optoelectronic devices in the presence of light. The measurement of band gaps in optoelectronic materials in the presence of external photo-excitation is displayed. The influences of magnetic quantization, crossed electric and quantizing fields, intense electric fields on the on the dispersion relation in heavily doped semiconductors and super-lattices are also discussed. This book contains 200 open research problems which form the integral part of the text and are useful for graduate students and researchers. The book is written for post graduate students, researchers and engineers Modo de acceso: World Wide Web Physics Solid state physics Nanoscale science Nanoscience Nanostructures Semiconductors Microwaves Optical engineering Nanotechnology Physics Semiconductors Nanotechnology Microwaves, RF and Optical Engineering Nanoscale Science and Technology Solid State Physics Libros electrónicos Recursos electrónicos SpringerLink (Online service) Springer Tracts in Modern Physics 0081-3869 265