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monografia Rebiun19342318 https://catalogo.rebiun.org/rebiun/record/Rebiun19342318 130212s2012 gw a sb 001 0 eng d 9783527330324 9783527646371 UPM 991005762626904212 UPVA 997925476603706 CaPaEBR CaPaEBR UMA.RE High-k gate dielectrics for CMOS technology Recurso electrónico] edited by Gang He and Zhaoqi Sun Weinheim Wiley-VCH 2012 Weinheim Weinheim Wiley-VCH xxxi, 558 p. ill. (some col.) xxxi, 558 p. Ebook Central Includes bibliographical references and index pt. 1. Scaling and challenging of Si-based CMOS -- pt. 2. High-k deposition and materials characterization -- pt. 3. Challenge in interface engineering and electrode -- pt. 4. Development in non-Si-based CMOS technology -- pt. 5. High-k Application in novel devices -- pt. 6. Challenge and directions Electronic reproduction. Palo Alto, Calif. ebrary 2013. Available via World Wide Web. Access may be limited to ebrary affiliated libraries Modo de acceso: World Wide Web Ebook Central Dielectrics Metal oxide semiconductors, Complementary He, Gang Sun, Zhaoqi Ebook Central (Servicio en línea)