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Characterization Methods fo...

Characterization Methods for Submicron MOSFETs

Haddara, Hisham

Springer US 1996

The Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) is a key component in modern microelectronics. During the last decade, device physicists, researchers and engineers have been continuously faced with new elements making the task of MOSFET characterization increasingly crucial, as well as more difficult. The progressive miniaturization of devices has caused several phenomena to emerge and modify the performance of scaled-down MOSFETs. Localized degradation induced by hot carrier injection and Random Telegraph Signal (RTS) noise generated by individual traps are examples. It was thus unavoidable to develop new models and new characterization methods, or at least adapt the existing ones to cope with the special nature of these new phenomena. Characterization Methods for Submicron MOSFETs deals with techniques which show high potential for characterization of submicron devices. Throughout the book the focus is on the adaptation of such methods to resolve measurement problems relevant to VLSI devices and new materials, especially Silicon-on-Insulator (SOI). Characterization Methods for Submicron MOSFETs was written to provide help to device engineers and researchers to enable them to cope with the challenges they face. Without adequate device characterization, new physical phenomena and new types of defects or damage may not be well identified or dealt with, leading to an undoubted obstruction of the device development cycle. Audience: Researchers and graduate students familiar with MOS device physics, working in the field of device characterization and modeling. Also intended for industrial engineers working in device development, seeking to enlarge their understanding of measurement methods. The book additionally addresses device-based characterization for material and process engineers and for circuit designers. A valuable reference that may be used as a text for advanced courses on the subject

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monografia Rebiun29262255 https://catalogo.rebiun.org/rebiun/record/Rebiun29262255 m o d cr mnu---uuaaa 121227s1996 mau o 000 0 eng 1243533981 1244623183 9781461313557 electronic bk.) 1461313554 electronic bk.) 9781461285847 1461285844 10.1007/978-1-4613-1355-7 doi AU@ 000051722371 NZ1 14983167 NZ1 15313145 AU@ eng pn AU@ OCLCO OCLCQ OCLCO GW5XE OCLCQ OCLCF UA@ COO OCLCQ UAB OCLCQ EBLCP OCLCO OCLCQ TJFC bicssc TEC008010 bisacsh 621.3815 23 Haddara, Hisham Characterization Methods for Submicron MOSFETs edited by Hisham Haddara Boston, MA Springer US 1996 Boston, MA Boston, MA Springer US 1 online resource (248 pages) 1 online resource (248 pages) Text txt rdacontent computer c rdamedia online resource cr rdacarrier The Kluwer International Series in Engineering and Computer Science, Analog Circuits and Signal Processing 0893-3405 352 1 Static Measurements and Parameter Extraction -- 1.1 Introduction -- 1.2 Modeling of MOSFET DC Characteristics -- 1.3 MOSFET Parameter Extraction Methods -- 1.4 Measuring Techniques -- 1.5 Summary and Conclusion -- 2 Small Signal Characterization of VLSI MOSFETs -- 2.1 Introduction -- 2.2 Small Signal AC Model -- 2.3 Channel Frequency Response of MOSFETs -- 2.4 The Split Admittance Technique -- 2.5 Dynamic Transconductance -- 3 Charge Pumping -- 3.1 Introduction -- 3.2 Early Experiments and Basic Principle of CP Measurement -- 3.3 Interface State Generation-Recombination Kinetics -- 3.4 Experimental Techniques -- 3.5 Applications of Charge Pumping -- 3.6 Conclusion -- 4 Deep Level Transient Spectroscopy -- 4.1 Introduction -- 4.2 Generation, Recombination and Trapping Statistics -- 4.3 MOSFET Current Transient Spectroscopy -- 4.4 Signal Analysis -- 4.5 Depletion MOSFET Current Transient Spectroscopy -- 4.6 MOSFET Current DLTS Measurement System -- 5 Individual Interface Traps and Telegraph Noise -- 5.1 Introduction -- 5.2 Observation of Single Carrier Trapping -- 5.3 Experimental Properties of Individual Interface Traps -- 5.4 Interpretation and Modeling -- 5.5 Conclusion -- 6 Characterization of SOI MOSFETs -- 6.1 Introduction -- 6.2 Interest of MOS-SOI Technology -- 6.3 Synthesis of SOI Structures -- 6.4 Wafer Screening by?-MOSFET Technique -- 6.5 Capacitance and Conductance Techniques -- 6.6 SOI-MOSFETs: Basic Operation and Typical Characteristics -- 6.7 Profiling the Vertical Inhomogeneities -- 6.8 Charge Pumping Technique -- 6.9 Low Frequency Noise -- 6.10 Drain Current Transient Technique -- 6.11 Concluding Remarks -- 7 Modern Analog IC Characterization Techniques -- 7.1 Introduction -- 7.2 Random Mismatch in MOS Transistors -- 7.3 The Extraction of BJT Base Spreading Resistance -- 7.4 Mismatch Characterization of BJT for Statistical CAD -- 7.5 Test Structure for Resistance Matching Properties -- 7.6 MOS Capacitance Technique The Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) is a key component in modern microelectronics. During the last decade, device physicists, researchers and engineers have been continuously faced with new elements making the task of MOSFET characterization increasingly crucial, as well as more difficult. The progressive miniaturization of devices has caused several phenomena to emerge and modify the performance of scaled-down MOSFETs. Localized degradation induced by hot carrier injection and Random Telegraph Signal (RTS) noise generated by individual traps are examples. It was thus unavoidable to develop new models and new characterization methods, or at least adapt the existing ones to cope with the special nature of these new phenomena. Characterization Methods for Submicron MOSFETs deals with techniques which show high potential for characterization of submicron devices. Throughout the book the focus is on the adaptation of such methods to resolve measurement problems relevant to VLSI devices and new materials, especially Silicon-on-Insulator (SOI). Characterization Methods for Submicron MOSFETs was written to provide help to device engineers and researchers to enable them to cope with the challenges they face. Without adequate device characterization, new physical phenomena and new types of defects or damage may not be well identified or dealt with, leading to an undoubted obstruction of the device development cycle. Audience: Researchers and graduate students familiar with MOS device physics, working in the field of device characterization and modeling. Also intended for industrial engineers working in device development, seeking to enlarge their understanding of measurement methods. The book additionally addresses device-based characterization for material and process engineers and for circuit designers. A valuable reference that may be used as a text for advanced courses on the subject Engineering Computer engineering Systems engineering Computer engineering. Engineering. Systems engineering. Electronic books Print version 9781461285847 Kluwer international series in engineering and computer science. Analog circuits and signal processing 352

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monografia Rebiun29262255 https://catalogo.rebiun.org/rebiun/record/Rebiun29262255 m o d cr mnu---uuaaa 121227s1996 mau o 000 0 eng 1243533981 1244623183 9781461313557 electronic bk.) 1461313554 electronic bk.) 9781461285847 1461285844 10.1007/978-1-4613-1355-7 doi AU@ 000051722371 NZ1 14983167 NZ1 15313145 AU@ eng pn AU@ OCLCO OCLCQ OCLCO GW5XE OCLCQ OCLCF UA@ COO OCLCQ UAB OCLCQ EBLCP OCLCO OCLCQ TJFC bicssc TEC008010 bisacsh 621.3815 23 Haddara, Hisham Characterization Methods for Submicron MOSFETs edited by Hisham Haddara Boston, MA Springer US 1996 Boston, MA Boston, MA Springer US 1 online resource (248 pages) 1 online resource (248 pages) Text txt rdacontent computer c rdamedia online resource cr rdacarrier The Kluwer International Series in Engineering and Computer Science, Analog Circuits and Signal Processing 0893-3405 352 1 Static Measurements and Parameter Extraction -- 1.1 Introduction -- 1.2 Modeling of MOSFET DC Characteristics -- 1.3 MOSFET Parameter Extraction Methods -- 1.4 Measuring Techniques -- 1.5 Summary and Conclusion -- 2 Small Signal Characterization of VLSI MOSFETs -- 2.1 Introduction -- 2.2 Small Signal AC Model -- 2.3 Channel Frequency Response of MOSFETs -- 2.4 The Split Admittance Technique -- 2.5 Dynamic Transconductance -- 3 Charge Pumping -- 3.1 Introduction -- 3.2 Early Experiments and Basic Principle of CP Measurement -- 3.3 Interface State Generation-Recombination Kinetics -- 3.4 Experimental Techniques -- 3.5 Applications of Charge Pumping -- 3.6 Conclusion -- 4 Deep Level Transient Spectroscopy -- 4.1 Introduction -- 4.2 Generation, Recombination and Trapping Statistics -- 4.3 MOSFET Current Transient Spectroscopy -- 4.4 Signal Analysis -- 4.5 Depletion MOSFET Current Transient Spectroscopy -- 4.6 MOSFET Current DLTS Measurement System -- 5 Individual Interface Traps and Telegraph Noise -- 5.1 Introduction -- 5.2 Observation of Single Carrier Trapping -- 5.3 Experimental Properties of Individual Interface Traps -- 5.4 Interpretation and Modeling -- 5.5 Conclusion -- 6 Characterization of SOI MOSFETs -- 6.1 Introduction -- 6.2 Interest of MOS-SOI Technology -- 6.3 Synthesis of SOI Structures -- 6.4 Wafer Screening by?-MOSFET Technique -- 6.5 Capacitance and Conductance Techniques -- 6.6 SOI-MOSFETs: Basic Operation and Typical Characteristics -- 6.7 Profiling the Vertical Inhomogeneities -- 6.8 Charge Pumping Technique -- 6.9 Low Frequency Noise -- 6.10 Drain Current Transient Technique -- 6.11 Concluding Remarks -- 7 Modern Analog IC Characterization Techniques -- 7.1 Introduction -- 7.2 Random Mismatch in MOS Transistors -- 7.3 The Extraction of BJT Base Spreading Resistance -- 7.4 Mismatch Characterization of BJT for Statistical CAD -- 7.5 Test Structure for Resistance Matching Properties -- 7.6 MOS Capacitance Technique The Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) is a key component in modern microelectronics. During the last decade, device physicists, researchers and engineers have been continuously faced with new elements making the task of MOSFET characterization increasingly crucial, as well as more difficult. The progressive miniaturization of devices has caused several phenomena to emerge and modify the performance of scaled-down MOSFETs. Localized degradation induced by hot carrier injection and Random Telegraph Signal (RTS) noise generated by individual traps are examples. It was thus unavoidable to develop new models and new characterization methods, or at least adapt the existing ones to cope with the special nature of these new phenomena. Characterization Methods for Submicron MOSFETs deals with techniques which show high potential for characterization of submicron devices. Throughout the book the focus is on the adaptation of such methods to resolve measurement problems relevant to VLSI devices and new materials, especially Silicon-on-Insulator (SOI). Characterization Methods for Submicron MOSFETs was written to provide help to device engineers and researchers to enable them to cope with the challenges they face. Without adequate device characterization, new physical phenomena and new types of defects or damage may not be well identified or dealt with, leading to an undoubted obstruction of the device development cycle. Audience: Researchers and graduate students familiar with MOS device physics, working in the field of device characterization and modeling. Also intended for industrial engineers working in device development, seeking to enlarge their understanding of measurement methods. The book additionally addresses device-based characterization for material and process engineers and for circuit designers. A valuable reference that may be used as a text for advanced courses on the subject Engineering Computer engineering Systems engineering Computer engineering. Engineering. Systems engineering. Electronic books Print version 9781461285847 Kluwer international series in engineering and computer science. Analog circuits and signal processing 352