Descripción del título
Low-Frequency Noise in Advanced CMOS Devices begins with an introduction to noise, describing the fundamental noise sources and basic circuit analysis. The characterization of low-frequency noise is discussed in detail and useful practical advice is given. The various theoretical and compact low-frequency (1/f) noise models in MOS transistors are treated extensively providing an in-depth understanding of the low-frequency noise mechanisms and the potential sources of the noise in MOS transistors. Advanced CMOS technology including nanometer scaled devices, strained Si, SiGe, SOI, high-k gate dielectrics, multiple gates and metal gates are discussed from a low-frequency noise point of view. Some of the most recent publications and conference presentations are included in order to give the very latest view on the topics. The book ends with an introduction to noise in analog/RF circuits and describes how the low-frequency noise can affect these circuits
Monografía
monografia Rebiun16520786 https://catalogo.rebiun.org/rebiun/record/Rebiun16520786 cr nn 008mamaa 100301s2007 ne | s |||| 0|eng d 9781402059100 978-1-4020-5910-0 10.1007/978-1-4020-5910-0 doi UMO 66038 UPCT u358284 UPVA 996875994103706 UAM 991007698098904211 UCAR 991007933799604213 CBUC 991004877060306711 CBUC 991000725591406712 TJF bicssc TEC008000 bisacsh TEC008070 bisacsh 621.381 23 Haartman, Martin von Low-Frequency Noise In Advanced Mos Devices Recurso electrónico-En línea] by Martin von Haartman, Mikael Östling Dordrecht Springer Netherlands 2007 Dordrecht Dordrecht Springer Netherlands digital Analog Circuits and Signal Processing Series Engineering (Springer-11647) Accesible sólo para usuarios de la UPV Recurso a texto completo Low-Frequency Noise in Advanced CMOS Devices begins with an introduction to noise, describing the fundamental noise sources and basic circuit analysis. The characterization of low-frequency noise is discussed in detail and useful practical advice is given. The various theoretical and compact low-frequency (1/f) noise models in MOS transistors are treated extensively providing an in-depth understanding of the low-frequency noise mechanisms and the potential sources of the noise in MOS transistors. Advanced CMOS technology including nanometer scaled devices, strained Si, SiGe, SOI, high-k gate dielectrics, multiple gates and metal gates are discussed from a low-frequency noise point of view. Some of the most recent publications and conference presentations are included in order to give the very latest view on the topics. The book ends with an introduction to noise in analog/RF circuits and describes how the low-frequency noise can affect these circuits Reproducción electrónica Forma de acceso: Web Engineering Microwaves Electronics Systems engineering Engineering Electronics and Microelectronics, Instrumentation Circuits and Systems Physics and Applied Physics in Engineering Microwaves, RF and Optical Engineering Östling, Mikael SpringerLink (Servicio en línea) Springer eBooks Springer eBooks Printed edition 9781402059094 Analog Circuits and Signal Processing Series